{"paper":{"title":"Temperature Coefficient of Resistivity in Amorphous Semiconductors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.stat-mech","authors_text":"David A. Drabold, Ming-Liang Zhang","submitted_at":"2011-12-09T18:07:15Z","abstract_excerpt":"By invoking the microscopic response method in conjunction with a reasonable set of approximations, we obtain new explicit expressions for the electrical conductivity and temperature coefficient of resistivity (TCR) in amorphous semiconductors, especially a-Si:H and a-Ge:H. The predicted TCR for n-doped a-Si:H and a-Ge:H is in agreement with experiments. The conductivity from the transitions from a localized state to an extended state (LE) is comparable to that from the transitions between two localized states (LL). This resolves a long-standing anomaly, a \"kink\" in the experimental $\\log_{10}"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1112.2169","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}