{"paper":{"title":"MeV ion-induced strain at nanoisland-semiconductor surface and interfaces","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"2-1, (2) Department of Quantum Engineering, (3) Toyota National College of Technology, Aichi, Bhubaneswar, B. Satpati (1), India, Japan, Japan), J. Ghatak (1), K. Akimoto (2), K. Ito (2), M. Umananda (1), Nagoya, Nagoya University, P. V. Satyam (1), Sachivalaya Marg, T. Emoto (3) ((1) Institute of Physics, Toyota","submitted_at":"2005-03-04T07:30:47Z","abstract_excerpt":"Strain at surfaces and interfaces play an important role in the optical and electronic properties of materials. MeV ion-induced strain determination in single crystal silicon substrates and in Ag (nanoisland)/Si(111) at surface and interfaces has been carried out using transmission electron microscopy (TEM) and surface-sensitive X-ray diffraction. Ag nanoislands are grown under various surface treatments using thermal evaporation in high vacuum conditions. Irradiation has been carried out with 1.5 MeV Au^{2+} ions at various fluences and impact angles. Selected area electron diffraction (SAED)"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0503091","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}