{"paper":{"title":"Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.space-ph"],"primary_cat":"cond-mat.mes-hall","authors_text":"A. S. Bakerenkov, G. I. Zebrev, V. A. Felitsyn, V. V. Orlov","submitted_at":"2017-02-21T15:54:53Z","abstract_excerpt":"We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at different measurement temperatures and interface trap densities. The model allows simulating of the off-state and the on-state drain currents of irradiated MOSFETs based on an equal footing. Particularly, a novel compact model of the rebound effect in n-MOSFETs was employed for simulation of the total dose dependencies of drain currents in the highly scaled 60 nm node circuits irradiated up to 1Grad. Compatibility of th"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1702.06454","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}