{"paper":{"title":"Strong Band-Edge Light Emission from InGaAs RTDs: Evidence for the Universal Nature of Resonant- and Zener- Co-Tunneling","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"E. R. Brown, P. R. Berger, R. Droopad, T. A. Growden, W-D. Zhang","submitted_at":"2018-04-20T15:20:28Z","abstract_excerpt":"We report strong light emission from a room-temperature n-type unipolar-doped In0.53Ga0.47As/AlAs double-barrier resonant-tunneling diode (DBRTD) precisely at the In0.53Ga0.47As band-edge near 1650 nm. The emission characteristics are very similar to what was observed recently in GaN/AlN DBRTDs, both of which suggest that the mechanism for emission is cross-gap electron-hole recombination via resonant- and Zener co-tunneling of electrons, the latter mechanism generating the required holes. Analysis shows that because of the relatively small bandgap, the Zener tunneling probability can be large"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1804.07666","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}