{"paper":{"title":"High resolution SIMS depth profiling of nanolayers","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["physics.chem-ph"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"A.V. Zinovev, C.E. Tripa, I.V. Veryovkin, J.W. Elam, M.J. Pellin, Q. Peng, S.V. Baryshev","submitted_at":"2012-04-27T15:42:52Z","abstract_excerpt":"We report results of high-resolution TOF SIMS (time of flight secondary ion mass spectrometry) depth profiling experiments on a nanolayered structure, a stack of 16 alternating MgO and ZnO ~5.5 nm layers grown on a Si substrate by atomic layer deposition. The measurements were performed using a newly developed approach implementing a low energy direct current normally incident Ar+ ion beam for sample material removal by sputtering (250 eV and 500 eV energy), in combination with a pulsed 5 keV Ar+ ion beam at 60{\\deg} incidence for TOF SIMS analysis. By this optimized arrangement, a noticeably "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1204.6252","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}