{"paper":{"title":"Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.dis-nn"],"primary_cat":"cond-mat.mes-hall","authors_text":"A. V. Dvurechenskii, A. V. Nenashev, F. Gebhard, J. O. Oelerich, S. D. Baranovskii","submitted_at":"2017-04-01T13:23:58Z","abstract_excerpt":"Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field $\\mu(F)/\\mu(0)$ in a system of random sites is determined by the localization length $a$, and not by the concentration of sites $N$. This result is in drastic contrast to what is usually assumed in the literature for a theoretical description of experimental data and for device modeling, where $N^{-1/3}$ is considered as the decisive length scale for $\\mu(F)$. We show that although the limiting value $\\mu(F \\rightarrow 0)$ is determined by the ratio $N^{-1/3}/a$"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.00167","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}