{"paper":{"title":"Ultrahigh-Gain Phototransistors Based on Graphene-MoS2 Heterostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Chang-Hsiao Chen, Chih-Piao Chuu, Chi-Te Liang, Jing-Kai Huang, Jr-Hau He, Lain-Jong Li, Mei-Ying Chou, Meng-Lin Tsai, Wenjing Zhang, Yung-Huang Chang","submitted_at":"2013-02-05T22:49:19Z","abstract_excerpt":"Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction devices is limited by their small junction area, where the typical photoresponsivity is lower than 0.01 AW-1. On the other hand, the atomically thin layer of molybdenum disulfide (MoS2) is a two-dimensional (2d) nanomaterial with a direct and finite band gap, offering the possibility of acting as a 2d light absorber. The optoelectronic properties of the hetero"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1302.1230","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}