{"paper":{"title":"InGaN Metal-IN Solar Cell: optimized efficiency and fabrication tolerance","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Abdoulwahab Adaine (LMOPS), Nicolas Fressengeas (LMOPS), Sidi Ould Saad Hamady (LMOPS)","submitted_at":"2017-05-17T06:44:24Z","abstract_excerpt":"Choosing the Indium Gallium Nitride (InGaN) ternary alloy for thin films solar cells might yield high benefits concerning efficiency and reliability, because its bandgap can be tuned through the Indium composition and radiations have little destructive effect on it. It may also reveal challenges because good quality p-doped InGaN layers are difficult to elaborate. In this letter, a new design for an InGaN thin film solar cell is optimized, where the player of a PIN structure is replaced by a Schottky contact, leading to a Metal-IN (MIN) structure. With a simulated efficiency of 19.8%, the MIN "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1705.08256","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}