{"paper":{"title":"Topological phase transition in GeSnH$_2$ induced by biaxial tensile strain: A tight-binding study","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Esmaeil Taghizadeh Sisakht, Farhad Fazileh, F. M. Peeters, H. Ghorbanfekr-Kalashami, Zahra Aslani","submitted_at":"2018-09-11T12:22:30Z","abstract_excerpt":"An effective tight-binding (TB) Hamiltonian for monolayer GeSnH$_2$ is proposed which has an inversion-asymmetric honeycomb structure. The low-energy band structure of our TB model agrees very well with previous {\\it ab initio} calculations under biaxial tensile strain. We predict a phase transition upon 7.5\\% biaxial tensile strain in agreement with DFT calculations. Upon 8.5\\% strain the system exhibits a band gap of 134 meV, suitable for room temperature applications. The topological nature of the phase transition is confirmed by: 1)the calculation of the $\\mathbb{Z}_2$ topological invarian"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1809.03811","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}