{"paper":{"title":"P-type polar transition of chemically doped multilayer MoS2 transistor","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Daeyeong Lee, Deshun Qu, Faisal Ahmed, Jungjin Ryu, Won Jong Yoo, Xiaochi Liu, Zheng Yang","submitted_at":"2015-12-09T11:16:16Z","abstract_excerpt":"The accessibility of both n-type and p-type MoS2 FET is necessary for complementary device applications involving MoS2. However, MoS2 PFET is rarely achieved due to pinning effect resulting high Rc at metal-MoS2 interface and the inherently strong n-type property of the MoS2 material. In this study, we realized a high-performance multi-layer MoS2 PFET via controllable chemical doping, which has an excellent on/off ratio of 107 and a maximum hole mobility of 72 cm2/Vs at room temperature, and these values are further exceeding to 109 and 132 cm2/Vs at 133K. In addition, we revealed that large R"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1604.08162","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}