{"paper":{"title":"Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Ouerghi, C. Mathieu, D. Kazazis, D. Mailly, E. Pallecchi, F. Schopfer, M. Ridene, W. Poirier","submitted_at":"2012-03-15T09:59:47Z","abstract_excerpt":"In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\\times 50 \\mu\\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $\\nu = 2$, an evidence of monolayer graphene. We find low electron concentration of $9\\times 10^{11} \\textrm{cm}^{-2}$ and we show that a doping of $10^{13}\\textrm{cm}^{-2}$ which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is "},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1203.3299","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}