{"paper":{"title":"UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Anamika Singh Pratiyush, Digbijoy Neelim Nath, Rangarajan Muralidharan, Sandeep Kumar, Sudhiranjan Tripathy, Surani Bin Dolmanan","submitted_at":"2017-09-12T05:05:48Z","abstract_excerpt":"We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the channel + barrier was recess etched to a depth of 20 nm to pinch-off the 2DEG between Source-Drain pads. Spectral responsivity (SR) of 34 A/W at 367 nm was measured at 5 V in conjunction with very high photo to dark current ratio of > 10^7. The photo to dark current ratio at a fixed bias was found to be decreasing with increase in recess length of t"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1709.03692","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}