{"paper":{"title":"Topological phase transition and two dimensional topological insulators in Ge-based thin films","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Bansil, Bahadur Singh, Hsin Lin, R. Prasad","submitted_at":"2013-12-02T09:08:08Z","abstract_excerpt":"We discuss possible topological phase transitions in Ge-based thin films of Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ as a function of layer thickness and Bi concentration $x$ using the first principles density functional theory framework. The bulk material is a topological insulator at $x$ = 1.0 with a single Dirac cone surface state at the surface Brillouin zone center, whereas it is a trivial insulator at $x$ = 0. Through a systematic examination of the band topologies we predict that thin films of Ge(Bi$_x$Sb$_{1-x}$)$_2$Te$_4$ with $x$ = 0.6, 0.8 and 1.0 are candidates for two-dimensional (2D) topol"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1312.0379","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}