{"paper":{"title":"Site preference and diffusion behaviors of H influenced by the implanted-He in 3C-\\b{eta} SiC","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"B. C. Pan, H. Y. He, J. L. Chen, R. Ding, Sen Wang","submitted_at":"2017-09-15T03:39:25Z","abstract_excerpt":"SiC materials are potential plasma facing materials in fusion reactors. In this study, site preference and diffusion behaviors of H in pure 3C-\\b{eta} SiC and in He-implanted 3C-\\b{eta} SiC are investigated, on the basis of the first-principles calculations. We find that the most stable sites for H in pure 3C-\\b{eta}SiC is the anti-bond site of C (ABc) in Si-C, while it becomes the bond-center (BC) site of Si-C bonds in the He-implanted 3C-\\b{eta} SiC. Analysis on the electronic structures reveals that such change is attributed to the reduction of hybridization of C-Si bonds induced by He. Mor"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1709.05046","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}