{"paper":{"title":"Spatial Imaging of Charge Transport in Silicon at Low Temperature","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"B. A. Young, B. Cabrera, C. Stanford, F. Inuslla, F. Ponce, J. Allen, J. J. Yen, K. Sundqvist, M. Cherry, N. A. Kurinsky, P. L. Brink, R. A. Moffatt, S. Yellin","submitted_at":"2018-07-20T18:19:25Z","abstract_excerpt":"We present direct imaging measurements of charge transport across a 1 cm$\\times$ 1 cm$\\times$ 4 mm crystal of high purity silicon ($\\sim$20 k$\\Omega$cm) at temperatures between 500 mK and and 5 K. We use these data to determine the intervalley scattering rate of electrons as a function of the electric field applied along the $\\langle 111 \\rangle$ crystal axis, and we present a phenomenological model of intervalley scattering that explains the constant scattering rate seen at low-voltage for cryogenic temperatures. We also demonstrate direct imaging measurements of effective hole mass anisotrop"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1807.07986","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}