{"paper":{"title":"High aspect ratio silicon structures by Displacement Talbot lithography and Bosch etching","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Christian Dais, Harun Solak, Joan Vila-Comamala, Konstantins Jefimovs, Li Wang, Lucia Romano, Marco Stampanoni, Matias Kagias, Zhentian Wang","submitted_at":"2018-10-31T08:40:21Z","abstract_excerpt":"Despite the fact that the resolution of conventional contact/proximity lithography can reach feature sizes down to ~0.5-0.6 micrometers, the accurate control of the linewidth and uniformity becomes already very challenging for gratings with periods in the range of 1-2 {\\mu}m. This is particularly relevant for the exposure of large areas and wafers thinner than 300{\\mu}m. If the wafer or mask surface is not fully flat due to any kind of defects, such as bowing/warpage or remaining topography of the surface in case of overlay exposures, noticeable linewidth variations or complete failure of lith"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1810.13156","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}