{"paper":{"title":"Spintronic devices on the base of magnetic nanostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. I. Stognij, A. S. Shulenkov, L. V. Lutsev, N. N. Novitskii","submitted_at":"2011-12-08T10:02:10Z","abstract_excerpt":"Two types of spintronic devices on the base of magnetic nanostructures containing silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAs substrate - magnetic sensors and field-effect transistor governed by applied magnetic field - are studied. Magnetic sensors are based on the injection magnetoresistance effect. This effect manifests itself in avalanche suppression by the magnetic field in GaAs near the SiO2(Co)/GaAs interface. Field-effect transistor contains the SiO2(Co) film under gate. It is found that the magnetic field action leads to great changes in electron mobility in the c"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1112.1798","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}