{"paper":{"title":"Leakage-free electrolytes with different conductivity for non-volatile memory device utilizing insulator/metal ferromagnet transition of SrCoOx","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Hiromichi Ohta, Takayoshi Katase, Yuki Suzuki","submitted_at":"2017-06-01T00:29:36Z","abstract_excerpt":"The electrochemical switching of SrCoOx-based non-volatile memory with thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivity (s) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO 7Al2O3 film with nanoporous structure (CAN), but the electrochemical oxidation/reduction of SrCoOx layer required the application of high gate voltage (Vg) up to 20 V for a very long retention-time (t) 40 minutes, primarily due to the low s (2.0 x 10-8 S cm-1 at RT) of leakage-free water.We then con"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1706.00132","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}