{"paper":{"title":"Saturated Low-Temperature Conductivity in Ultrafast Semiconductor Nanocomposites","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.dis-nn"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"E. R. Brown, M. Martin, W. Zhang","submitted_at":"2013-07-13T02:30:16Z","abstract_excerpt":"This article presents studies on low-field electrical conduction in the range 4-to-300 K for a ultrafast material: InGaAs:ErAs grown by molecular beam epitaxy. The unique properties include nano-scale ErAs crystallines in host semiconductor, a deep Fermi level, and picosecond ultrafast photocarrier recombination. As the temperature drops, the conduction mechanisms are in the sequence of thermal activation, nearest-neighbor hopping, variable-range hopping, and Anderson localization. In the low-temperature limit, finite-conductivity metallic behavior, not insulating, was observed. This unusual c"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1307.3605","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}