{"paper":{"title":"Gate-Tunable Quantum Dot in a High Quality Single Layer MoS$_{\\mathrm{2}}$ Van der Waals Heterostructure","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Hiske Overweg, Kenji Watanabe, Klaus Ensslin, Marius Eich, Patrick Back, Riccardo Pisoni, Takashi Taniguchi, Thomas Ihn, Yongjin Lee, Zijin Lei","submitted_at":"2018-01-01T14:55:19Z","abstract_excerpt":"We have fabricated an encapsulated monolayer MoS$_{\\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\\mathrm{2}}$/Vs at a density of 7 $\\times$ 10$^{\\mathrm{12}}$ cm$^{\\mathrm{-2}}$ at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of the hBN we are able to confine electrons in MoS$_{\\mathrm{2}}$ and observe the Coulomb blockade effect. By tuning the middle gate voltage we reach a double dot"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1801.00452","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}