{"paper":{"title":"Description of statistical switching in perpendicular STT-MRAM within an analytical and numerical micromagnetic framework","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Anna Giordano, Bruno Azzerboni, Giovanni Finocchio, Giulio Siracusano, Mario Carpentieri, Massimiliano d'Aquino, Pat Braganca, Riccardo Tomasello, Vito Puliafito","submitted_at":"2017-02-24T19:38:40Z","abstract_excerpt":"The realistic modeling of STT-MRAM for the simulations of hybrid CMOS/Spintronics devices in comprehensive simulation environments require a full description of stochastic switching processes in state of the art STT-MRAM. Here, we derive an analytical formulation that takes into account the spin-torque asymmetry of the spin polarization function of magnetic tunnel junctions studying. We studied its validity range by comparing the analytical formulas with results achieved numerically within a full micromagnetic framework. We also find that a reasonable fit of the probability density function (P"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1702.07739","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}