{"paper":{"title":"Investigation of interface spacing, stability, band offsets and electronic properties on (001) SrHfO3/GaAs interface : First principles calculations","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Chun-Ran Li, Hai-Kuan Dong, Kai-Cheng Zhang, Li-Bin Shi, Xiao-Ming Xiu, Xu-Yang Liu","submitted_at":"2017-11-09T02:48:42Z","abstract_excerpt":"SrHfO3 is a potential dielectric material for metal-oxide-semiconductor (MOS) devices. SrHfO3/GaAs interface has attracted attention due to its unique properties. In this paper, the interface properties of (001) SrHfO3/GaAs are investigated by frst principles calculations based on density functional theory (DFT). Firstof all, the adsorption behavior of Sr, Hf and O on GaAs surface is investigated. O has lower adsorption energy on Ga surface than on As surface. Then, some possible (0 0 1) SrHfO3/GaAs confgurations are considered to analyze the interface spacing, stability, band offsets and char"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1711.03238","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}