{"paper":{"title":"Micropatterned Electrostatic Traps for Indirect Excitons in Coupled GaAs Quantum Wells","license":"","headline":"","cross_cats":["cond-mat.other","cond-mat.str-el"],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Gartner, A.W. Holleitner, D. Schuh, J.P. Kotthaus, L. Prechtel","submitted_at":"2007-05-16T20:33:32Z","abstract_excerpt":"We demonstrate an electrostatic trap for indirect excitons in a field-effect structure based on coupled GaAs quantum wells. Within the plane of a double quantum well indirect excitons are trapped at the perimeter of a SiO2 area sandwiched between the surface of the GaAs heterostructure and a semitransparent metallic top gate. The trapping mechanism is well explained by a combination of the quantum confined Stark effect and local field enhancement. We find the one-dimensional trapping potentials in the quantum well plane to be nearly harmonic with high spring constants exceeding 10 keV/cm^2."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"0705.2428","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}