{"paper":{"title":"Fabrication of quantum dots in undoped Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using a single metal-gate layer","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"D. Bethke, E. Nielsen, G. A. Ten Eyck, J. Dominguez, J. K. Gamble, J. R. Wendt, M. C. Wanke, M. P. Lilly, M. S. Carroll, R. P. Muller, T. M. Lu, T. Pluym","submitted_at":"2016-08-29T15:39:25Z","abstract_excerpt":"Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \\revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30\\%. Here we report the fabrication and low-temperature characterization of quantum dots in Si/Si$_{0.8}$Ge$_{0.2}$ heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 $\\mu$m increases as the width decreases. The higher threshold can be attributed to the combin"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1608.08107","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}