{"paper":{"title":"Microscopic control of $^{29}$Si nuclear spins near phosphorus donors in silicon","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"physics.atm-clus","authors_text":"D. Zvezdov, J. Ahokas, J. J\\\"arvinen, L. Lehtonen, L. Vlasenko, M. Gwak, O. Vainio, SangGap Lee, S. Mitsudo, Soonchil Lee, S. Sheludyakov, S. Vasiliev, T. Mizusaki, Y. Fujii","submitted_at":"2014-09-23T09:52:13Z","abstract_excerpt":"We demonstrate an efficient control of $^{29}$Si nuclear spin orientation for specific lattice sites near $^{31}$P donors in silicon crystals at temperatures below 1 K and in high magnetic field of 4.6 T. Excitation of the forbidden electron-nuclear transitions leads to a pattern of narrow holes and peaks in the ESR lines of $^{31}$P. The pattern originates from dynamic polarization the $^{29}$Si nuclear spins near the donors via the solid effect. This method can be used for initialization of qubits based on $^{29}$Si nuclear spins in the all-silicon quantum computer. In comparison, polarizati"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1409.6462","kind":"arxiv","version":3},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}