{"paper":{"title":"Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.plasm-ph","authors_text":"B.K. Daas, K. M. Daniels, M.V.S. Chandrashekhar, T.S. Sudarshan","submitted_at":"2010-10-20T00:18:34Z","abstract_excerpt":"We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi level position of graphene and estimate carrier mobility. By showing that 1/root(ns), the carrier concentration/ML, we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. Polariton formation finds application in near-field optical devices such as superlenses."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1010.4080","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}