{"paper":{"title":"Electronic Structure of Epitaxial Single-Layer MoS$_2$","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall","cond-mat.str-el"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Antonija Grubi\\v{s}i\\'c \\v{C}abo, Jeppe Vang Lauritsen, Jill A. Miwa, Maciej Dendzik, Marco Bianchi, Philip Hofmann, Signe G. S{\\o}rensen, S{\\o}ren Ulstrup","submitted_at":"2014-10-02T17:27:42Z","abstract_excerpt":"The electronic structure of epitaxial single-layer MoS$_2$ on Au(111) is investigated by angle-resolved photoemission spectroscopy. Pristine and potassium-doped layers are studied in order to gain access to the conduction band. The potassium-doped layer is found to have a (1.39$\\pm$0.05)~eV direct band gap at $\\bar{K}$ with the valence band top at $\\bar{\\Gamma}$ having a significantly higher binding energy than at $\\bar{K}$. The moir\\'e superstructure of the epitaxial system does not lead to the presence of observable replica bands or minigaps. The degeneracy of the upper valence band at $\\bar"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1410.0615","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}