{"paper":{"title":"Tuning of structure inversion asymmetry by the $\\delta$-doping position in (001)-grown GaAs quantum wells","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"D. Schuh, L.E. Golub, P. Olbrich, S.D. Ganichev, S. Stachel, V. Lechner, V.V. Bel'kov, W. Wegscheider","submitted_at":"2009-03-06T15:48:03Z","abstract_excerpt":"Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-doping layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position we grow samples with almost equal degrees of structure and bulk inversion asymmetry."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"0903.1232","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}