{"paper":{"title":"Highly Efficient Exciton Modulation in MoSe$_2$/PdSe$_2$ Heterostructures","license":"http://creativecommons.org/licenses/by/4.0/","headline":"A MoSe₂/PdSe₂ van der Waals stack enhances room-temperature A-exciton emission sixfold via interlayer coupling.","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Bing Wu, Caterina Cocchi, Danae Katrisoti, Domenico De Fazio, Emma Contin, Giancarlo Soavi, Giovanni Antonio Salvatore, Ioannis Paradisanos, Kenji Watanabe, Leonardo Puppulin, Micol Bertolotti, Muhammad Sufyan Ramzan, Nouha Loudhaief, Petr Rozhin, Stefano Dal Conte, Takashi Taniguchi, Till Weickhardt, Zden\\v{e}k Sofer","submitted_at":"2026-05-13T08:59:57Z","abstract_excerpt":"Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay channels governs emission efficiency. Existing approaches, such as defect passivation, chemical doping, dielectric engineering, and strain tuning, primarily aim to suppress non-radiative losses. Here, we report a pronounced $\\sim$6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe$_2$/PdSe$_2$ van der Waals heterostructure, yielding a photoluminescence quantum yield of 6 %, compared to $\\sim$1 %"},"claims":{"count":4,"items":[{"kind":"strongest_claim","text":"we report a pronounced ∼6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe₂/PdSe₂ van der Waals heterostructure, yielding a photoluminescence quantum yield of 6 %, compared to ∼1 % for as-exfoliated monolayer MoSe₂","source":"verdict.strongest_claim","status":"machine_extracted","claim_id":"C1","attestation":"unclaimed"},{"kind":"weakest_assumption","text":"The observed enhancement and B-exciton quenching arise specifically from interlayer electronic coupling that redistributes exciton populations, rather than from fabrication-induced strain, defects, or dielectric changes at the interface.","source":"verdict.weakest_assumption","status":"machine_extracted","claim_id":"C2","attestation":"unclaimed"},{"kind":"one_line_summary","text":"A MoSe2/PdSe2 heterostructure achieves six-fold higher A-exciton emission at room temperature via interlayer coupling that redirects excitons to the radiative channel.","source":"verdict.one_line_summary","status":"machine_extracted","claim_id":"C3","attestation":"unclaimed"},{"kind":"headline","text":"A MoSe₂/PdSe₂ van der Waals stack enhances room-temperature A-exciton emission sixfold via interlayer coupling.","source":"verdict.pith_extraction.headline","status":"machine_extracted","claim_id":"C4","attestation":"unclaimed"}],"snapshot_sha256":"edd1daf79af77737eb815a5eaaa51b8a1b9c52a53f0990628d7408573322e5d1"},"source":{"id":"2605.13211","kind":"arxiv","version":1},"verdict":{"id":"0f47ce17-4832-4ea8-aa8f-0bc4a247d307","model_set":{"reader":"grok-4.3"},"created_at":"2026-05-14T01:59:30.156179Z","strongest_claim":"we report a pronounced ∼6-fold enhancement of room-temperature A-exciton emission in a type-I MoSe₂/PdSe₂ van der Waals heterostructure, yielding a photoluminescence quantum yield of 6 %, compared to ∼1 % for as-exfoliated monolayer MoSe₂","one_line_summary":"A MoSe2/PdSe2 heterostructure achieves six-fold higher A-exciton emission at room temperature via interlayer coupling that redirects excitons to the radiative channel.","pipeline_version":"pith-pipeline@v0.9.0","weakest_assumption":"The observed enhancement and B-exciton quenching arise specifically from interlayer electronic coupling that redistributes exciton populations, rather than from fabrication-induced strain, defects, or dielectric changes at the interface.","pith_extraction_headline":"A MoSe₂/PdSe₂ van der Waals stack enhances room-temperature A-exciton emission sixfold via interlayer coupling."},"references":{"count":73,"sample":[{"doi":"","year":2020,"title":"C. Wang, F. Yang, and Y. Gao, Nanoscale Adv.2, 4323 (2020)","work_id":"1bb420d5-984f-4d44-83b3-ebe70614a239","ref_index":1,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2015,"title":"O. Salehzadeh, M. Djavid, N. H. Tran, I. Shih, and Z. Mi, Nano Lett.15, 5302 (2015)","work_id":"4a46538f-9575-4e31-92a2-4a719f4d262a","ref_index":2,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2016,"title":"I. Aharonovich, D. Englund, and M. Toth, Nat. Photonics 10, 631 (2016)","work_id":"7287d83d-1d24-4cff-baf0-3ddc57c86748","ref_index":3,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2021,"title":"H. Kim, S. Z. Uddin, N. Higashitarumizu, E. Rabani, and A. Javey, Science373, 448 (2021)","work_id":"5bd95e33-fcee-4e19-8936-003fa9a6dbf3","ref_index":4,"cited_arxiv_id":"","is_internal_anchor":false},{"doi":"","year":2021,"title":"M. A. Reshchikov, Phys. Status Solidi A218, 2000101 (2021)","work_id":"cbc0a7fd-094e-4909-9221-1c0784d41c94","ref_index":5,"cited_arxiv_id":"","is_internal_anchor":false}],"resolved_work":73,"snapshot_sha256":"a8d9935fc646dba1a6dbb1ce7f8fc850165657f29746be5bb4dc7a160cb347a4","internal_anchors":0},"formal_canon":{"evidence_count":2,"snapshot_sha256":"f5be15df2b1fa95ee38acc6509e10d24210e662a1d1aeb543044463a2cd55a4f"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}