{"paper":{"title":"Pressure-induced gap closing and metallization of MoSe$_{2}$ and MoTe$_{2}$","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Erio Tosatti, Michaela Riflikov\\'a, Roman Marto\\v{n}\\'ak","submitted_at":"2016-05-17T11:07:00Z","abstract_excerpt":"Layered molybdenum dichalchogenides are semiconductors whose gap is controlled by delicate interlayer interactions. The gap tends to drop together with the interlayer distance, suggesting collapse and metallization under pressure. We predict, based on first principles calculations, that layered semiconductors 2H$_c$-MoSe$_2$ and 2H$_c$-MoTe$_2$ should undergo metallization at pressures between 28 and 40 GPa (MoSe$_2$) and 13 and 19 GPa (MoTe$_2$). Unlike MoS$_2$ where a 2H$_c$ $\\to$ 2H$_a$ layer sliding transition is known to take place, these two materials appear to preserve the original 2H$_"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1605.05111","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}