{"paper":{"title":"Ultrafast Carrier Dynamics in VO$_2$ across the Pressure-Induced Insulator-to-Metal Transition","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.str-el","authors_text":"2), (2) Technische Universit\\\"at Dresden, (3) University of Warsaw, (4) Oak Ridge National Laboratory, (5) Vanderbilt University, Alexej Pashkin (1) ((1) Helmholtz-Zentrum Dresden-Rossendorf, Germany, Harald Schneider (1), Johannes M. Braun (1, Lynn A. Boatner (4), Manfred Helm (1, Poland, Rafa{\\l} Mirek (3), Richard F. Haglund (5), Robert E. Marvel (5), TN USA, TN USA)","submitted_at":"2017-08-29T17:58:56Z","abstract_excerpt":"We utilize near-infrared pump and mid-infrared probe spectroscopy to investigate the ultrafast electronic response of pressurized VO$_2$. Distinct pump-probe signals and a pumping threshold behavior are observed even in the pressure-induced metallic state showing a noticeable amount of localized electronic states. Our results are consistent with a scenario of a bandwidth-controlled Mott-Hubbard transition."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1708.08913","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}