{"paper":{"title":"An Early Model of Transistors and Circuits","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.ins-det","authors_text":"Cesar H. Comin, Filipi N. Silva, L. da F. Costa","submitted_at":"2017-01-09T17:24:46Z","abstract_excerpt":"Bipolar junction transistors (BJTs) have been at the core of linear electronics from its beginnings. Although their properties can be well represented transport model equations, design and analysis approaches have, to a good extent, been limited to using current-equispaced horizontal and parallel isolines of the characteristic surface. Here, we resort to the geometrical structure imposed on BJTs behavior by the Early effect and voltage as a means to derive a simple, intuitive and more complete respective model that, though excluding cut-off and saturation regimes, can simplify the design and c"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1701.02269","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}