{"paper":{"title":"Magnetoresistance in Dilute $p$-Si/SiGe in Parallel and Tilted Magnetic Fields","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A.V. Suslov, D.R. Leadley, I.L. Drichko, I.Yu. Smirnov, O.A. Mironov","submitted_at":"2009-10-15T10:33:44Z","abstract_excerpt":"We report the results of an experimental study of the magnetoresistance $\\rho_{xx}$ and $\\rho_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\\times10^{10}$ cm$^{-2}$ and $p$=2$\\times10^{11}$ cm$^{-2}$. The research was performed in the temperature range of 0.3-2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two-dimensional (2D) channel plane. The large in-plane magnetoresistance can be explained by the influence of the \\textit{in-plane} magnetic field on the orbital motion of the charge carriers in the quasi-2D system. The measu"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"0910.2833","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}