{"paper":{"title":"24 \\textmu m length spin relaxation length in boron nitride encapsulated bilayer graphene","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Bart J. van Wees, Josep Ingla-Ayn\\'es, Marcos H. D. Guimar\\~aes, Paul J. Zomer, Rick J. Meijerink","submitted_at":"2015-06-01T12:31:09Z","abstract_excerpt":"We have performed spin and charge transport measurements in dual gated high mobility bilayer graphene encapsulated in hexagonal boron nitride. Our results show spin relaxation lengths $\\lambda_s$ up to 13~\\textmu m at room temperature with relaxation times $\\tau_s$ of 2.5~ns. At 4~K, the diffusion coefficient rises up to 0.52~m$^2$/s, a value 5 times higher than the best achieved for graphene spin valves up to date. As a consequence, $\\lambda_s$ rises up to 24~\\textmu m with $\\tau_s$ as high as 2.9~ns. We characterized 3 different samples and observed that the spin relaxation times increase wi"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1506.00472","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}