{"paper":{"title":"Electric field modulated topological magnetoelectric effect in Bi$_2$Se$_3$","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mtrl-sci"],"primary_cat":"cond-mat.mes-hall","authors_text":"Andreas V. Stier, Bing Cheng, Cheng Wan, Deepti Jain, Dipanjan Chaudhuri, Jamie Neilson, Jisoo Moon, Maryam Salehi, Michael A. Quintero, Mintu Mondal, N. J. Laurita, N. P. Armitage, Pavel P. Shibayev, Seongshik Oh","submitted_at":"2018-07-04T18:54:22Z","abstract_excerpt":"Topological insulators have been predicted to exhibit a variety of interesting phenomena including a quantized magnetoelectric response and novel spintronics effects due to spin textures on their surfaces. However, experimental observation of these phenomena has proved difficult due to the finite bulk carrier density which may overwhelm the intrinsic topological responses that are expressed at the surface. Here, we demonstrate a novel ionic gel gating technique to tune the chemical potential of Bi$_{2}$Se$_{3}$ thin films while simultaneously performing THz spectroscopy. We can tune the carrie"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1807.01742","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}