{"paper":{"title":"Shot noise in self-assembled InAs quantum dots","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"A. Nauen, F. Hohls, I. Hapke-Wurst, K. Pierz, R. J. Haug, U. Zeitler","submitted_at":"2002-07-10T17:46:24Z","abstract_excerpt":"We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $\\alpha$ with an average value of $\\alpha \\approx 0.8$ consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in $\\alpha$ can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"cond-mat/0207266","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}