{"paper":{"title":"Electric field controlled magnetic exchange bias and magnetic state switching at room temperature in Ga doped {\\alpha}-Fe2O3 oxide","license":"http://creativecommons.org/licenses/by-sa/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Abdul Gaffar Lone, R.N. Bhowmik","submitted_at":"2017-07-13T16:37:57Z","abstract_excerpt":"We have developed a new magnetoelectric material based on Ga doped {\\alpha}-Fe2O3 in rhombohedral phase. The material is a canted ferromagnet at room temperature and showing magneto-electric properties. The experimental results of electric field controlled magnetic state provided a direct evidence of room temperature magnetoelectric coupling in Ga doped {\\alpha}-Fe2O3 system. Interestingly, (un-doped) {\\alpha}-Fe2O3 system does not exhibit any electric field controlled magnetic exchange bias shift, but Ga doped {\\alpha}-Fe2O3 system has shown an extremely high electric field induced magnetic e"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1707.04496","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}