{"paper":{"title":"Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios","license":"http://creativecommons.org/licenses/by-nc-nd/4.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Itsuki Furuhashi, Ke Wei, Markus Pristovsek, Sheng Zhang, Xinhua Wang, Xinyu Liu, Xu Yang","submitted_at":"2026-05-14T03:46:52Z","abstract_excerpt":"We report N-polar AlN-based high-electron mobility transistors (HEMTs) with a GaN channel thickness of 5.2 nm on N-polar AlN on sapphire. The threshold voltage is around -2.4 to -3.0 V with saturation currents over 240 mA/mm and on/off ratios as high as 10,000, much higher than previously reported N-polar AlN-based HEMTs. The high on/off ratio is attributed to the use of an abrupt AlN/GaN heterostructure with a dedicated AlN transition layer, together with improved gate leakage. The high frequency properties as well as the on-resistance of ~20 Ohm mm are all limited by the 2000 Ohm/square shee"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"2605.14329","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}