{"paper":{"title":"Influence of Metal-Graphene Contact on the Operation and Scalability of Graphene Field-Effect-Transistors","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.other"],"primary_cat":"cond-mat.mes-hall","authors_text":"Debdeep Jena, Pei Zhao, Qin Zhang, Siyuranga O. Koswatta","submitted_at":"2011-06-06T16:14:52Z","abstract_excerpt":"We explore the effects of metal contacts on the operation and scalability of 2D Graphene Field-Effect-Transistors (GFETs) using detailed numerical device simulations based on the non-equilibrium Green's function formalism self-consistently solved with the Poisson equation at the ballistic limit. Our treatment of metal-graphene (M-G) contacts captures: (1) the doping effect due to the shift of the Fermi level in graphene contacts, (2) the density-of-states (DOS) broadening effect inside graphene contacts due to Metal-Induced-States (MIS). Our results confirm the asymmetric transfer characterist"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1106.1111","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}