{"paper":{"title":"UHV-CVD Growth of High Quality GeSn Using SnCl4: From Growth Optimization to Prototype Devices","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"5 B. Li, A. Mosleh, B. Alharthi, G. Abernathy, H.A. Naseem, H. Tran, J.M. Grant, M. Mortazavi, P.C. Grant, S.Q. Yu, W. Dou, W. Du","submitted_at":"2018-10-05T05:50:41Z","abstract_excerpt":"The persistent interest of the epitaxy of group IV alloy GeSn is mainly driven by the demand of efficient light source that could be monolithically integrated on Si for mid-infrared Si photonics. For chemical vapor deposition of GeSn, the exploration of parameter window is difficult from the beginning due to its non-equilibrium growth condition. In this work, we demonstrated the effective pathway to achieve the high quality GeSn with high Sn incorporation. The GeSn films were grown on Ge-buffered Si via ultra-high vacuum chemical vapor deposition using GeH4 and SnCl4 as precursor gasses. The i"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1810.02523","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}