{"paper":{"title":"Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Andr\\'e Dankert, B. N Madhushankar, M.Venkata Kamalakar, Saroj P. Dash","submitted_at":"2014-06-17T18:50:58Z","abstract_excerpt":"Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We observe a reduced of Schottky barrier < 50 meV by using TiO${_2}$/Co contacts, which could be further tuned by gate voltages. Eminently a good transistor performance is achieved in BP devices, with drain current modulation on the order of four to six orders of magnitude. The charge carrier mobility is found to be $\\sim$ 155 and 0.18 cm${^2}$ V${^{-1}}$ s${^"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1406.4476","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}