{"paper":{"title":"Determination of band offsets of Ga2O3/FTO heterojunction for current spreading for high temperature and UV applications","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"physics.app-ph","authors_text":"Carlos G. Torres-Castanedo, Kuang-Hui Li, Xiaohang Li","submitted_at":"2019-06-17T08:36:31Z","abstract_excerpt":"Because of relatively low electron mobility of Ga2O3, it is important to identify proper current spreading materials. Fluorine-doped SnO2 (FTO) offers superior properties to those of indium tin oxide (ITO) including higher thermal stability, larger bandgap, and lower cost. However, the Ga2O3/FTO heterojunction including the important band offset and the I-V characteristics have not been reported. In this work, we have grown the Ga2O3/FTO heterojunction and performed X-ray photoelectron spectroscopy (XPS) measurement. The conduction and valence band offsets were determined to be 0.11 and 0.42 e"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1906.06896","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}