{"paper":{"title":"Interfacial energy barrier height of Al$_2$O$_3$/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Aur\\'elien Mar\\'echal, Meiyong Liao, Satoshi Koizumi, Yukako Kato","submitted_at":"2017-03-06T09:27:57Z","abstract_excerpt":"The interfacial band configuration of the high-k dielectric Al$_2$O$_3$ deposited at 120{\\deg}C by atomic layer deposition (ALD) on boron- and phosphorus-doped hydrogen-terminated (111) diamond was investigated. Performing X-ray photoelectron spectroscopy measurements of core level binding energies and valence band maxima values, the valence band offsets of both heterojunctions are concluded to be {\\Delta}E$_V$ = 1.8 eV and {\\Delta}E$_V$ = 2.7 eV for the Al$_2$O$_3$/H(111)p and the Al$_2$O$_3$/H(111)n respectively. The ALD Al$_2$O$_3$ bandgap energy was measured from the O 1s photoelectron ene"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1703.01778","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}