{"paper":{"title":"Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Keita Tachiki, Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto","submitted_at":"2019-01-17T08:45:05Z","abstract_excerpt":"We report that annealing in low-oxygen-partial-pressure (low-p$_{\\rm O2}$) ambient is effective in reducing the interface state density (D$_{\\rm IT}$) at a SiC (0001)/SiO$_{\\rm 2}$ interface near the conduction band edge (E$_{\\rm C}$) of SiC. The D$_{\\rm IT}$ value at E$_{\\rm C}$$-$0.2 eV estimated by a high (1 MHz)-low method is 6.2$\\times$10$^{12}$ eV$^{-1}$cm$^{-2}$ in as-oxidized sample, which is reduced to 2.4${\\times}$10$^{12}$ eV$^{-1}$cm$^{-2}$ by subsequent annealing in O$_{\\rm 2}$ (0.001%) at 1500${}^\\circ$C, without interface nitridation. Although annealing in pure Ar induces leakag"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1901.05681","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}