{"paper":{"title":"High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO$_3$/SrZrO$_3$ heterostructures","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Arnaud P. Nono Tchiomo, Bryan P. Doyle, Jochen Mannhart, Peter van Aken, Prosper Ngabonziza, Wilfried Sigle, Wolfgang Braun","submitted_at":"2019-03-27T18:46:38Z","abstract_excerpt":"By inserting a SrZrO$_3$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO$_3$ films. A room temperature mobility of 140 cm$^2$ V$^{-1}\\text{s}^{-1}$ is achieved for 25-nm-thick films without any post-growth treatment. The density of threading dislocations is only $4.9\\times 10^{9}$ cm$^{-2}$ for buffered films prepared on (110) TbScO$_3$ substrates by pulsed laser deposition."},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1903.11645","kind":"arxiv","version":2},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}