{"paper":{"title":"Electron Mobility in Polarization-doped Al$\\mathrm{_{0-0.2}}$GaN with a Low Concentration Near 10$\\mathrm{^{17}}$ cm$\\mathrm{^{-3}}$","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"Bo Song, Debdeep Jena, Huili Grace Xing, Kazuki Nomoto, Meng Qi, Mingda Zhu, Ming Pan, Xiang Gao, Zongyang Hu","submitted_at":"2017-04-10T18:21:53Z","abstract_excerpt":"In this letter, carrier transport in graded Al$\\mathrm{_x}$Ga$\\mathrm{_{1-x}}$N with a polarization-induced n-type doping as low as ~ 10$\\mathrm{^{17}}$ cm$\\mathrm{^{-3}}$ is reported. The graded Al$\\mathrm{_x}$Ga$\\mathrm{_{1-x}}$N is grown by metal organic chemical vapor deposition on a sapphire substrate and a uniform n-type doping without any intentional doping is realized by linearly varying the Al composition from 0% to 20% over a thickness of 600 nm. A compensating center concentration of ~10$\\mathrm{^{17}}$ cm$\\mathrm{^{-3}}$ was also estimated. A peak mobility of 900 cm$\\mathrm{^2}$/V$"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1704.03001","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}