{"paper":{"title":"A Computational Study of Vertical Partial Gate Carbon Nanotube FETs","license":"","headline":"","cross_cats":[],"primary_cat":"cond-mat.mes-hall","authors_text":"James Fodor, Jing Guo, Youngki Yoon","submitted_at":"2007-12-23T16:06:01Z","abstract_excerpt":"A vertical partial gate carbon nanotube (CNT) field-effect transistor (FET), which is amenable to the vertical CNT growth process and offers the potential for a parallel CNT array channel, is simulated using a self-consistent atomistic approach. We show that the underlap between the gate and the bottom electrode (required for isolation between electrodes) is advantageous for transistor operation because it suppresses ambipolar conduction. A vertical CNTFET with a gate length that covers only 1/6 of the channel length has a much smaller minimum leakage current than one without underlap, while m"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"0712.3931","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}