{"paper":{"title":"Gate-controlled weak antilocalization effect in inversion layer on p-type HgCdTe","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall"],"primary_cat":"cond-mat.dis-nn","authors_text":"Guolin Yu, Jianrong Yang, Junhao Chu, Li He, Ning Dai, Rui Yang, Shaoling Guo, Tie Lin, Xinzhi Liu, Yanfeng Wei","submitted_at":"2010-10-18T02:12:09Z","abstract_excerpt":"We discover weak antilocalization effect of two-dimensional electron gas with one electric subband occupied in the inversion layer on p-type HgCdTe crystal. By fitting the model of Iordanskii, Lyanda-Geller and Pikus to data at varies temperatures and gate voltages, we extract phase coherence and spin-orbit scattering times as functions of temperature and carrier density. We find that Elliot-Yafet mechanism and Nyquist mechanism are the dominating spin decoherence and dephasing mechanisms, respectively. We also find that the Rashba parameter is relatively large and the dependence of Rashba par"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1010.3464","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}