{"paper":{"title":"A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields","license":"http://arxiv.org/licenses/nonexclusive-distrib/1.0/","headline":"","cross_cats":["cond-mat.mes-hall","physics.app-ph"],"primary_cat":"cond-mat.mtrl-sci","authors_text":"Chengbao Jiang, Han Yan, Hui Hua, Hui Wang, Huixin Guo, Jingmin Wang, Jinhua Wang, Michael Coey, Peixin Qin, ShunLi Shang, Wenkuo Lu, Xiaoning Wang, Xiaorong Zhou, Zengwei Zhu, Zexiang Hu, Zexin Feng, Zhaoguogang Leng, Zhiqi Liu, Zikui Liu, Zuhuang Chen","submitted_at":"2019-01-11T11:12:07Z","abstract_excerpt":"Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields, or N\\'eel spin-orbit torque is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructure"},"claims":{"count":0,"items":[],"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"source":{"id":"1901.03551","kind":"arxiv","version":1},"verdict":{"id":null,"model_set":{},"created_at":null,"strongest_claim":"","one_line_summary":"","pipeline_version":null,"weakest_assumption":"","pith_extraction_headline":""},"references":{"count":0,"sample":[],"resolved_work":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57","internal_anchors":0},"formal_canon":{"evidence_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"author_claims":{"count":0,"strong_count":0,"snapshot_sha256":"258153158e38e3291e3d48162225fcdb2d5a3ed65a07baac614ab91432fd4f57"},"builder_version":"pith-number-builder-2026-05-17-v1"}