Vertical NiOx/(011) β-Ga2O3 heterojunction diodes reach >10 kV breakdown, 43 mΩ·cm² on-resistance, and >2.3 GW/cm² power figure of merit with the highest reported parallel-plane field for thick (011) epitaxial layers.
Over 6 μm thick MOCVD -grown low -background carrier density (10 15 cm−3) high-mobility (010) β -Ga2O3 drift layers
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VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) \beta-Ga2O3 HJDs with PFOM >2.3 GW/cm2
Vertical NiOx/(011) β-Ga2O3 heterojunction diodes reach >10 kV breakdown, 43 mΩ·cm² on-resistance, and >2.3 GW/cm² power figure of merit with the highest reported parallel-plane field for thick (011) epitaxial layers.